BD900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD895/897/899/901 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896/898/900/902 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BD896 BD898 VCBO Collector-base voltage BD900 BD902 BD896 BD898 VCEO Collector-emitter voltage BD900 BD902 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current-DC Base current TC=25℃ Total power dissipation Ta=25℃ Junction temperature Storage temperature 2 150 -65~150 ℃ ℃ Open collector Open base -80 -100 -5 -8 -300 70 W V A mA Open emitter -80 -100 -45 -60 V CONDITIONS VALUE -45 -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD896 BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IE=-8A IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10Ω;tp=20μs IC=-3A ,IB=-12mA IC=-3A ; VCE=-3V VCB=-45V, IE=0 TC=100℃ VCB=-60V, IE=0 TC=100℃ VCB=-80V, IE=0 TC=100℃ VCB=-100V, IE=0 TC=100℃ VCE=-30V, IB=0 VCE=-30V, IB=0 CONDITIONS BD896/898/900/902 MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -100 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 V V mA -0.5 mA -2 750 -3.5 1 5 mA V μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD896/898/900/902 Fig.2 Outline dimensions 3