BD907

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD907 DESCRIPTION ·DC Current Gain : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·Complement to Type BD908 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 60 60 5 15 20 5 90 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.38 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD907 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 B 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 60V;IE= 0 0.5 mA ICEO Collector Cutoff Current VCE= 30V;IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 4V 40 250 hFE-2 DC Current Gain IC= 5A ; VCE= 4V 15 150 hFE-3 DC Current Gain IC= 10A ; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V; ftest= 1.0MHz 3.0 MHz isc Website：www.iscsemi.cn 2