INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD908
DESCRIPTION ·DC Current Gain : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·Complement to Type BD907 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE -60 -60 -5 -15 -20 -5 90 150 -65~150
UNIT V V V A A A W ℃ ℃
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.38 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BD908
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -50mA; IB= 0
-60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
B
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -2.5A
-3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -10A; IB= -2.5A
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -4V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
-0.5
mA
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
B
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -4V
40
250
hFE-2
DC Current Gain
IC= -5A; VCE= -4V
15
150
hFE-3
DC Current Gain
IC= -10A ; VCE= -4V
5
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -4V; ftest= 1.0MHz
3.0
MHz
isc Website:www.iscsemi.cn
2
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