BD911

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD909 BD911 DESCRIPTION ・With TO-220C package ・Complement to type BD910 BD912 APPLICATIONS ・Intented for use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER BD909 Collector-base voltage BD911 BD909 VCEO Collector-emitter voltage BD911 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC≤25℃ Open collector Open base 100 5 15 5 90 150 -65~150 V A A W ℃ ℃ Open emitter 100 80 V CONDITIONS VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD909 BD911 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage BD909 IC=0.1A; IB=0 BD911 IC=5 A;IB=0.5 A IC=10A;IB=2.5 A IC=10A;IB=2.5 A IC=5A ; VCE=4V BD909 ICBO Collector cut-off current BD911 BD909 ICEO Collector cut-off current BD911 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency VCE=50V; IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=4V IC=5A ; VCE=4V IC=10A ; VCE=4V IC=0.5A ; VCE=4V 40 15 5 3 MHz 1 250 150 mA VCB=80V; IE=0 TC=150℃ VCB=100V; IE=0 TC=150℃ VCE=40V; IB=0 1 mA 100 1.0 3.0 2.5 1.5 0.5 5 0.5 5 V V V V CONDITIONS MIN 80 V TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD909 BD911 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD909 BD911 4