BD938F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933F/935F/937F/939F/941F APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD934F BD936F VCBO Collector-Base Voltage BD938F BD940F BD942F BD934F BD936F VCEO Collector-Emitter Voltage BD938F BD940F BD942F VEBO IC ICM IB B VALUE -45 -60 -100 -120 -140 -45 -60 -80 -100 -120 -5 -3 -7 -0.5 19 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD934F BD936F VCEO(SUS) Collector-Emitter Sustaining Voltage BD938F BD940F BD942F VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product BD934F/936F/938F/940F/942F CONDITIONS MIN 45 60 TYP. MAX UNIT IC= 100mA ; IB= 0 80 100 120 V IC= -1A; IB= -0.1A B -0.6 -1.3 -0.1 -3.0 -0.5 -1.0 40 25 3 250 V V mA mA mA IC= -1A; VCE= -2V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax; IB= 0 VEB= -5V; IC= 0 IC= -150mA ; VCE= -2V IC= -1A ; VCE= -2V IC= -250mA ; VCE= -10V MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 0.7 2.4 μs 0.2 0.6 μs isc Website：www.iscsemi.cn 2