BD946F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD944F/946F/948F DESCRIPTION ·DC Current Gain: hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943F/945F/947F APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD944F VCBO Collector-Base Voltage BD946F BD948F BD944F VCEO Collector-Emitter Voltage BD946F BD948F VEBO IC ICM IB B VALUE -22 -32 -45 -22 -32 -45 -5 -5 -8 -1 22 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.93 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD944F VCEO(SUS) Collector-Emitter Sustaining Voltage BD946F BD948F BD944F/946F BD948F BD944F/946F BD948F ICBO Collector Cutoff Current BD944F ICEO Collector Cutoff Current BD946F BD948F IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain BD944F/946F hFE-3 DC Current Gain BD948F hFE-4 fT DC Current Gain--Only For BD948F Current-Gain—Bandwidth Product IC= -3A ; VCE= -1V IC= -250mA ; VCE= -1V IC= -2A ; VCE= -1V IC= -2A; IB= -0.2A B BD944F/946F/948F CONDITIONS MIN -22 TYP. MAX UNIT IC= -100mA ; IB= 0 -32 -45 -0.5 V VCE(sat) Collector-Emitter Saturation Voltage V IC= -3A; IB= -0.3A B -0.7 -1.1 V -1.3 -0.05 -1 mA VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V IC= -3A; VCE= -1V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ VCE= -15V; IB= 0 B VCE= -20V; IB= 0 B -0.1 mA VCE= -25V; IB= 0 B VEB= -5V; IC= 0 IC= -10mA ; VCE= -5V IC= -500mA ; VCE= -1V 25 85 50 40 30 3 -0.2 mA 475 MHz isc Website：www.iscsemi.cn 2