BD947F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION ·DC Current Gain: hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944F/946F/948F APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD943F VCBO Collector-Base Voltage BD945F BD947F BD943F VCEO Collector-Emitter Voltage BD945F BD947F VEBO IC ICM IB B VALUE 22 32 45 22 32 45 5 5 8 1 22 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.93 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD943F VCEO(SUS) Collector-Emitter Sustaining Voltage BD945F BD947F BD943F/945F BD947F BD943F/945F BD947F ICBO Collector Cutoff Current BD943F ICEO Collector Cutoff Current BD945F BD947F IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain BD943F/945F hFE-3 DC Current Gain BD947F hFE-4 fT DC Current Gain--Only For BD947F Current-Gain—Bandwidth Product IC= 3A ; VCE= 1V IC= 250mA ; VCE= 1V IC= 2A ; VCE= 1V IC= 2A; IB= 0.2A B BD943F/945F/947F CONDITIONS MIN 22 TYP. MAX UNIT IC= 100mA ; IB= 0 32 45 0.5 V VCE(sat) Collector-Emitter Saturation Voltage V IC= 3A; IB= 0.3A B 0.7 1.1 V 1.3 0.05 1 mA VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V IC= 3A; VCE= 1V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ VCE= 15V; IB= 0 B VCE= 20V; IB= 0 B 0.1 mA VCE= 25V; IB= 0 B VEB= 5V; IC= 0 IC= 10mA ; VCE= 5V IC= 500mA ; VCE= 1V 25 85 50 40 30 3 0.2 mA 475 MHz isc Website：www.iscsemi.cn 2