BD950F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD950F BD952F VCBO Collector-Base Voltage BD954F BD956F BD950F BD952F VCEO Collector-Emitter Voltage BD954F BD956F VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -100 -120 -5 -5 -8 22 150 -65~150 V A A W ℃ ℃ -100 -120 -60 -80 V VALUE -60 -80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 8.12 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD950F BD952F IC= -100mA ; IB= 0 BD954F BD956F VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -2A; IB= -0.2A B BD950F/952F/954F/956F CONDITIONS MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -1.0 -1.4 -0.05 -1 -0.1 -0.2 40 20 3 MHz V V mA mA mA IC= -2A; VCE= -4V VCB= VCBOmax; IE= 0 1 VCB= /2VCBOmax; IE= 0,TJ=150℃ VCE= 1/2VCEOmax; IB= 0 VEB= -5V; IC= 0 IC= -500mA ; VCE= -4V IC= -2A ; VCE= -4V IC= -500mA ; VCE= -4V Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 1.5 μs 0.3 μs isc Website：www.iscsemi.cn 2