BD953

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD953 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 5 40 150 -50~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=100V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 100 7 TYP. BD953 MAX UNIT V V 1.0 1.5 50 50 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD953 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3