BD955

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD955 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD956 APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 120 120 5 5 8 40 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage CONDITIONS IC= 1mA ; IB= 0 IC= 1mA ; IE= 0 IE= 1mA ; IC= 0 IC= 2A; IB= 0.2A B BD953 MIN 120 120 5 TYP. MAX UNIT V V V 1.0 1.4 50 1.0 0.1 0.2 40 20 3 V V μA mA mA mA IC= 2A; VCE= 4V VCB= 120V; IE= 0 ICBO Collector Cutoff Current VCB= 60V; IE= 0,TJ=150℃ ICEO IEBO hFE-1 hFE-2 fT Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VCE= 60V; IB= 0 B VEB= 5V; IC= 0 IC= 500mA ; VCE= 4V IC= 2A ; VCE= 4V IC= 500mA ; VCE= 4V MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.5 μs μs IC= 1.0A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω isc Website：www.iscsemi.cn 2