BDT29B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C ·Complement to Type BDT30/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT29 BDT29A VCBO Collector-Base Voltage BDT29B BDT29C BDT29 BDT29A VCEO Collector-Emitter Voltage BDT29B BDT29C VEBO IC ICM IB B BDT29/A/B/C VALUE 80 100 UNIT V 120 140 40 60 V 80 100 5 1 3 0.4 30 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT29 BDT29A IC= 30mA; IB= 0 BDT29B BDT29C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT29/A BDT29B/C IC= 1A; IB= 0.125A B BDT29/A/B/C CONDITIONS MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 0.7 1.3 0.2 V V mA IC= 1A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B ICEO Collector Cutoff Current 0.1 VCE= 60V; IB= 0 B mA IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VEB= 5V; IC= 0 IC= 0.2A ; VCE= 4V IC= 1A ; VCE= 4V IC= 0.2A ; VCE= 10V 40 15 3 0.2 mA 75 MHz Switching Times ton toff Turn-On Time IC= 1.0A; IB1= -IB2= 0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn