BDT29BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF ·Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT29F BDT29AF VCBO Collector-Base Voltage BDT29BF BDT29CF BDT29DF BDT29F BDT29AF VCEO Collector-Emitter Voltage BDT29BF BDT29CF BDT29DF VEBO IC ICM IB B BDT29F/AF/BF/CF/DF VALUE 80 100 120 140 160 40 60 80 100 120 5 1 3 0.4 19 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT29F BDT29AF VCEO(SUS) Collector-Emitter Sustaining Voltage BDT29BF BDT29CF BDT29DF VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT29F/AF ICEO Collector Cutoff Current BDT29BF/CF BDT29DF IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= 1A; IB= 0.125A B BDT29F/AF/BF/CF/DF CONDITIONS MIN 40 60 TYP. MAX UNIT IC= 30mA; IB= 0 80 100 120 0.7 1.3 0.2 V V V mA IC= 1A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B VCE= 60V; IB= 0 B 0.1 mA VCE= 90V; IB= 0 B VEB= 5V; IC= 0 IC= 0.2A ; VCE= 4V IC= 1A ; VCE= 4V IC= 0.2A ; VCE= 10V 40 15 3 0.2 mA 75 MHz Switching Times ton toff Turn-On Time IC= 1.0A; IB1= -IB2= 0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn