BDT30A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT30 BDT30A VCBO Collector-Base Voltage BDT30B BDT30C BDT30 BDT30A VCEO Collector-Emitter Voltage BDT30B BDT30C VEBO IC ICM IB B BDT30/A/B/C VALUE -80 -100 UNIT V -120 -140 -40 -60 V -80 -100 -5 -1 -3 -0.4 30 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT30 BDT30A IC= -30mA; IB= 0 BDT30B BDT30C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT30/A BDT30B/C IC= -1A; IB= -0.125A B BDT30/A/B/C CONDITIONS MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 -0.7 -1.3 -0.2 V V mA IC= -1A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 B ICEO Collector Cutoff Current -0.1 VCE= -60V; IB= 0 B mA IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VEB= -5V; IC= 0 IC= -0.2A ; VCE= -4V IC= -1A ; VCE= -4V IC= -0.2A ; VCE= -10V 40 15 3 -0.2 mA 75 MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn