BDT30DF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT30F BDT30AF VCBO Collector-Base Voltage BDT30BF BDT30CF BDT30DF BDT30F BDT30AF VCEO Collector-Emitter Voltage BDT30BF BDT30CF BDT30DF VEBO IC ICM IB B BDT30F/AF/BF/CF/DF VALUE -80 -100 -120 -140 -160 -40 -60 -80 -100 -120 -5 -1 -3 -0.4 19 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT30F BDT30AF VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30BF BDT30CF BDT30DF VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT30F/AF ICEO Collector Cutoff Current BDT30BF/CF BDT30DF IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -1A; IB= -0.125A B BDT30F/AF/BF/CF/DF CONDITIONS MIN -40 -60 TYP. MAX UNIT IC= -30mA; IB= 0 -80 -100 -120 -0.7 -1.3 -0.2 V V V mA IC= -1A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 B VCE= -60V; IB= 0 B -0.1 mA VCE= -90V; IB= 0 B VEB= -5V; IC= 0 IC= -0.2A ; VCE= -4V IC= -1A ; VCE= -4V IC= -0.2A ; VCE= -10V 40 15 3 -0.2 mA 75 MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn