BDT31F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT31F BDT31AF VCBO Collector-Base Voltage BDT31BF BDT31CF BDT31DF BDT31F BDT31AF VCEO Collector-Emitter Voltage BDT31BF BDT31CF BDT31DF VEBO IC ICM IB B BDT31F/AF/BF/CF/DF VALUE 80 100 120 140 160 40 60 80 100 120 5 3 5 1 22 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 8.12 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT31F BDT31AF VCEO(SUS) Collector-Emitter Sustaining Voltage BDT31BF BDT31CF BDT31DF BDT31F/AF/BF/CF VCE(sat) Collector-Emitter Saturation Voltage BDT31DF IC= 30mA; IB= 0 BDT31F/AF/BF/CF/DF CONDITIONS MIN 40 60 80 100 120 TYP. MAX UNIT V IC= 3A; IB= 0.375A B 1.2 V 2.5 1.8 0.2 V mA IC= 3A; IB= 0.75A B VBE(on) ICES Base-Emitter On Voltage Collector Cutoff Current BDT31F/AF IC= 3A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B ICEO Collector Cutoff Current BDT31BF/CF BDT31DF VCE= 60V; IB= 0 B 0.1 mA VCE= 90V; IB= 0 B IEBO hFE-1 Emitter Cutoff Current DC Current Gain BDT31F/AF/BF/CF VEB= 5V; IC= 0 IC=1A ; VCE= 4V 25 10 IC= 3A ; VCE= 4V BDT31DF 5 IC= 0.5A ; VCE= 10V 3 0.2 mA 50 hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product MHz Switching Times ton toff Turn-On Time IC= 1.0A; IB1= -IB2= 0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn