BDT32

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C ·Complement to Type BDT31/A/B/C APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT32 BDT 32A VCBO Collector-Base Voltage BDT 32B BDT 32C BDT32 BDT 32A VCEO Collector-Emitter Voltage BDT 32B BDT 32C VEBO IC ICM IB B BDT32/A/B/C VALUE -80 -100 UNIT V -120 -140 -40 -60 V -80 -100 -5 -3 -5 -1 40 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT32 BDT 32A IC= -30mA; IB= 0 BDT 32B BDT 32C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT32/A ICEO Collector Cutoff Current BDT 32B/C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VCE= -60V; IB= 0 B BDT32/A/B/C CONDITIONS MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 IC= -3A; IB= -0.375A B -1.2 -1.8 -0.2 V V mA IC= -3A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 B -0.1 mA VEB= -5V; IC= 0 IC= -1A ; VCE= -4V IC= -3A ; VCE= -4V IC= -0.5A ; VCE= -10V 25 10 3 -0.2 mA 50 MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn