BDT32DF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF ·Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT32F BDT32AF VCBO Collector-Base Voltage BDT32BF BDT32CF BDT32DF BDT32F BDT32AF VCEO Collector-Emitter Voltage BDT32BF BDT32CF BDT32DF VEBO IC ICM IB B BDT32F/AF/BF/CF/DF VALUE -80 -100 -120 -140 -160 -40 -60 -80 -100 -120 -5 -3 -5 -1 22 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 8.12 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT32F BDT32AF VCEO(SUS) Collector-Emitter Sustaining Voltage BDT32BF BDT32CF BDT32DF Collector-Emitter Saturation Voltage BDT32F/AF/BF/CF BDT32DF IC= -30mA; IB= 0 BDT32F/AF/BF/CF/DF CONDITIONS MIN -40 -60 -80 -100 -120 TYP. MAX UNIT V IC= -3A; IB= -0.375A B -1.2 V -2.5 -1.8 -0.2 V mA VCE(sat) IC= -3A; IB= -0.75A B VBE(on) ICES Base-Emitter On Voltage Collector Cutoff Current BDT32F/AF IC= -3A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 B ICEO Collector Cutoff Current BDT32BF/CF BDT32DF VCE= -60V; IB= 0 B -0.1 mA VCE= -90V; IB= 0 B IEBO hFE-1 Emitter Cutoff Current DC Current Gain BDT32F/AF/BF/CF VEB= -5V; IC= 0 IC= -1A ; VCE= -4V 25 10 IC= -3A ; VCE= -4V BDT32DF 5 IC= -0.5A ; VCE= -10V 3 -0.2 mA 50 hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product MHz Switching Times ton toff Turn-On Time IC= -1.0A; IB1= -IB2= -0.1A Turn-Off Time 1.0 μs 0.3 μs isc Website：www.iscsemi.cn