BDT41A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT41 BDT41A VCBO Collector-Base Voltage BDT41B BDT41C BDT41 BDT41A VCEO Collector-Emitter Voltage BDT41B BDT41C VEBO IC ICM IB B BDT41/A/B/C VALUE 80 100 UNIT V 120 140 40 60 V 80 100 5 6 10 3 65 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT41 BDT41A IC= 30mA; IB= 0 BDT 41B BDT 41C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT41/A ICEO Collector Cutoff Current BDT41B/C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VCE= 60V; IB= 0 B BDT41/A/B/C CONDITIONS MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 IC= 6A; IB= 0.6A B 1.5 2.0 0.4 V V mA IC= 6A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B 0.2 mA VEB= 5V; IC= 0 IC= 0.3A ; VCE= 4V IC= 3A ; VCE= 4V IC= 0.5A ; VCE= 10V 30 15 3 0.5 mA 75 MHz Switching Times ton toff Turn-On Time IC= 6A; IB1= -IB2= 0.6A Turn-Off Time 1.0 μs 0.6 μs isc Website：www.iscsemi.cn