BDT42

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C ·Complement to Type BDT41/A/B/C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT42 BDT42A VCBO Collector-Base Voltage BDT42B BDT42C BDT42 BDT42A VCEO Collector-Emitter Voltage BDT42B BDT42C VEBO IC ICM IB B BDT42/A/B/C VALUE -80 -100 UNIT V -120 -140 -40 -60 V -80 -100 -5 -6 -10 -3 65 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT42 BDT42A IC= -30mA; IB= 0 BDT42B BDT42C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT42/A ICEO Collector Cutoff Current BDT42B/C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VCE= -60V; IB= 0 B BDT42/A/B/C CONDITIONS MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 IC= -6A; IB= -0.6A B -1.5 -2.0 -0.4 V V mA IC= -6A ; VCE= -4V VCE= VCEOmax; VBE= 0 VCE= -30V; IB= 0 B -0.2 mA VEB= -5V; IC= 0 IC= -0.3A ; VCE= -4V IC= -3A ; VCE= -4V IC= -0.5A ; VCE= -10V 30 15 3 -0.5 mA 75 MHz Switching Times ton toff Turn-On Time IC= -6A; IB1= -IB2= -0.6A Turn-Off Time 0.7 μs 0.4 μs isc Website：www.iscsemi.cn