BDT61

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT61 Collector-Base Voltage BDT61A BDT61B BDT61C BDT61 Collector-Emitter Voltage BDT61A BDT61B BDT61C VEBO IC IB B BDT61/A/B/C VALUE 60 80 UNIT VCBO V 100 120 60 80 V 100 120 5 4 0.1 2 W 50 150 -65~150 ℃ ℃ V A A VCEO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2.5 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT61 BDT61A IC= 30mA; IB= 0 BDT61B BDT61C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C IEBO hFE VECF Emitter Cutoff Current DC Current Gain C-E Diode Forward Voltage IC= 1.5A; IB= 6mA IC= 1.5A ; VCE= 3V VCB= 60V; IE= 0 VCB= 30V; IE= 0; TJ=150℃ VCB= 80V; IE= 0 VCB= 40V; IE= 0; TJ=150℃ VCB= 100V; IE= 0 VCB= 50V; IE= 0; TJ=150℃ VCB= 120V; IE= 0 VCB= 60V; IE= 0; TJ=150℃ VCE= 30V; IB= 0 B BDT61/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 100 120 2.5 2.5 0.2 2.0 0.2 2.0 0.2 2.0 0.2 2.0 0.5 0.5 mA 0.5 0.5 5 750 2.0 V mA V V ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 B VCE= 50V; IB= 0 B VCE= 60V; IB= 0 B VEB= 5V; IC= 0 IC= 1.5A; VCE= 3V IE= 1.5A Switching Times ton toff Turn-On Time Turn-Off Time 1.0 4.5 μs μs IC= 2A; IB1= -IB2= 8mA; VBE(off)= -5V; RL= 20Ω isc Website：www.iscsemi.cn