BDT63

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT63 Collector-Emitter Voltage BDT63A BDT63B BDT63C BDT63 Collector-Emitter Voltage BDT63A BDT63B BDT63C VEBO IC ICM IB B BDT63/A/B/C VALUE 60 80 UNIT VCER V 100 120 60 80 V 100 120 5 10 15 0.25 90 150 -65~150 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.39 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT63 BDT63A V(BR)CEO Collector-Emitter Breakdown Voltage BDT63B BDT63C VCE(sat)-1 VCE(sat)-2 VBE(on) VECF ICEO ICBO IEBO hFE-1 hFE-2 COB Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance IC= 3A; IB= 12mA B BDT63/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT IC= 30mA ;IB=0 B V 100 120 2.0 2.5 2.5 2.0 0.5 0.2 2.0 5 1000 3000 100 pF V V V V mA mA mA IC= 8A; IB= 80mA B IC= 3A ; VCE= 3V IF= 3A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= 5V; IC=0 IC= 3A ; VCE= 3V IC= 10A ; VCE= 3V IE= 0 ; VCB= 10V; ftest= 1MHz Switching times ton toff Turn-On Time Turn-Off Time 1.0 5.0 2.5 10 μs μs IC= 3A; IB1= -IB2= 12mA; VCC= 10V isc Website：www.iscsemi.cn 2