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BDT64CF

BDT64CF

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    BDT64CF - isc Silicon PNP Darlington Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
BDT64CF 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT64F Collector-Emitter Voltage BDT64AF BDT64BF BDT64CF BDT64F Collector-Emitter Voltage BDT64AF BDT64BF BDT64CF VEBO IC ICM IB B BDT64F/AF/BF/CF VALUE -60 -80 UNIT VCER V -100 -120 -60 -80 V -100 -120 -5 -12 -20 -0.5 39 150 -65~150 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 5.7 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT64F BDT64AF IC= -30mA ;IB=0 B BDT64F/AF/BF/CF CONDITIONS MIN -60 -80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -100 -120 BDT64BF BDT64CF VCE(sat)-1 VCE(sat)-2 VBE(on) VECF ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance IC= -5A; IB= -20mA B -2.0 -3.0 -2.5 -2.0 -1 -0.4 -2 -5 4000 1000 800 200 V V V V mA mA mA IC= -10A; IB= -100mA IC= -5A ; VCE= -4V IF= -5A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= -5V; IC=0 IC= -1A ; VCE= -4V IC= -5A ; VCE= -4V IC= -12A ; VCE= -4V IE= 0 ; VCB= -10V; ftest=1MHz pF Switching times ton toff Turn-On Time Turn-Off Time 0.5 2.5 2 5 μs μs IC= -5A; IB1= -IB2= -20mA; VCC= -30V isc Website:www.iscsemi.cn 2
BDT64CF 价格&库存

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