BDT65A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT65 Collector-Emitter Voltage BDT65A BDT65B BDT65C BDT65 Collector-Emitter Voltage BDT65A BDT65B BDT65C VEBO IC ICM IB B BDT65/A/B/C VALUE 60 80 UNIT VCER V 100 120 60 80 V 100 120 5 12 20 0.5 125 150 -65~150 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT65 BDT65A IC= 30mA ;IB=0 B BDT65/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 100 120 BDT65B BDT65C VCE(sat)-1 VCE(sat)-2 VBE(on) VECF-1 VECF-2 ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance IC= 5A; IB= 20mA B 2.0 3.0 2.5 2.0 2.0 0.2 0.4 2.0 5 1500 1000 1000 200 V V V V V mA mA mA IC= 10A; IB= 100mA IC= 5A ; VCE= 4V IF= 5A IF= 12A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= 5V; IC=0 IC= 1A ; VCE= 4V IC= 5A ; VCE= 4V IC= 12A ; VCE= 4V IE= 0 ; VCB= 10V; ftest=1MHz pF Switching times ton toff Turn-On Time Turn-Off Time 1 6.0 2.5 10 μs μs IC= 5A; IB1= -IB2= 20mA; VCC= 30V isc Website：www.iscsemi.cn 2