BDT85

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT81 BDT83 VCBO Collector-Base Voltage BDT85 BDT87 BDT81 BDT83 VCEO Collector-Emitter Voltage BDT85 BDT87 VEBO IC ICM IB B BDT81/83/85/87 VALUE 60 80 UNIT V 100 120 60 80 V 100 120 7 15 20 4 125 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT81 BDT83 IC= 30mA; IB= 0 BDT85 BDT87 VCE(sat)-1 VCE(sat)-2 VBE(on) ICES ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= 5A; IB= 0.5A B BDT81/83/85/87 CONDITIONS MIN 60 80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 120 1.0 1.6 1.5 1 0.2 0.1 40 40 10 MHz V V V mA mA mA IC= 7A; IB= 0.7A B IC= 5A ; VCE= 4V VCE= 0.8VCBOmax; VBE= 0 VCB= VCBOmax; IE= 0 VEB= 7V; IC= 0 IC= 50mA ; VCE= 10V IC= 5A ; VCE= 4V IC= 0.5A ; VCE= 10V Switching Times ton toff Turn-On Time IC= 7A; IB1= -IB2= 0.7A Turn-Off Time 2 μs 1 μs isc Website：www.iscsemi.cn