BDT88

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 DESCRIPTION ·With TO-220C package ·Complement to type BDT87 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC≤25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -15 -5 125 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.38 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-7 A;IB=-0.7 A IC=-5A ; VCE=-4V VCB=-120V; IE=0 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-4V IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V 40 40 5 20 MHz MIN -120 -1.6 -1.5 -0.5 -1.0 -1.0 250 TYP. MAX UNIT V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDT88 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3