BDT92F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F; -100V(Min)- BDT96F ·Complement to Type BDT91F/93F/95F APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT92F VCBO Collector-Base Voltage BDT94F BDT96F BDT92F VCEO Collector-Emitter Voltage BDT94F BDT96F VEBO IC ICM IB B VALUE -60 -80 -100 -60 -80 -100 -7 -10 -20 -4 32 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT92F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT94F BDT96F VCE(sat)-1 VCE(sat)-2 VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -4A; IB= -0.4A B BDT92F/94F/96F CONDITIONS MIN -60 TYP. MAX UNIT IC= -100mA ; IB= 0 -80 -100 -1 -3 -1.6 -0.1 -1 -0.2 -0.1 20 5 4 200 V V V V mA mA mA IC= -10A; IB= -3.3A IC= -4A; VCE= -4V VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax V; IB= 0 VEB= -7V; IC= 0 IC= -4A ; VCE= -4V IC= -10A ; VCE= -4V IC= -500mA ; VCE= -10V MHz Switching times ton toff Turn-On Time IC= -4A; IB1= -IB2= -0.4A Turn-Off Time 1 3 μs 0.5 1.5 μs isc Website：www.iscsemi.cn 2