BDT93

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT91 VCBO Collector-Base Voltage BDT93 BDT95 BDT91 VCEO Collector-Emitter Voltage BDT93 BDT95 VEBO IC ICM IB B VALUE 60 80 100 60 80 100 7 10 20 4 90 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.4 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT91 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT93 BDT95 VCE(sat)-1 VCE(sat)-2 VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= 4A; IB= 0.4A B BDT91/93/95 CONDITIONS MIN 60 TYP. MAX UNIT IC= 100mA ; IB= 0 80 100 1 3 1.6 0.1 5 1 1 20 5 4 200 V V V V mA mA mA IC= 10A; IB= 3.3A IC= 4A; VCE= 4V VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax V; IB= 0 VEB= 7V; IC= 0 IC= 4A ; VCE= 4V IC= 10A ; VCE= 4V IC= 500mA ; VCE= 10V MHz Switching times ton toff Turn-On Time IC= 4A; IB1= -IB2= 0.4A Turn-Off Time 2 4 μs 0.5 1 μs isc Website：www.iscsemi.cn 2