BDV64B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDV64 Collector-Base Voltage BDV64A BDV64B BDV64C BDV64 Collector-Emitter Voltage BDV64A BDV64B BDV64C VEBO IC ICM IB B BDV64/A/B/C VALUE -60 -80 UNIT VCBO V -100 -120 -60 -80 V -100 -120 -5 -12 -15 -0.5 125 W 3.5 150 -65~150 ℃ ℃ V A A A VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 35.7 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDV64 BDV64A IC= -30mA; IB= 0 BDV64B BDV64C VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDV64 BDV64A ICBO Collector Cutoff Current BDV64B BDV64C ICBO IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain VCB= -60V; IE= 0;TJ= 150℃ VCB= -70V; IE= 0;TJ= 150℃ VCB= VCBOmax; IE= 0 VEB= -5V; IC= 0 IC= -5A; VCE= -4V IC= -5A; IB= -20mA B BDV64/A/B/C CONDITIONS MIN -60 -80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -100 -120 -2.0 -2.5 -2.0 V V mA IC= -5A; VCE= -4V VCE= 1/2VCEOmax; IB= 0 VCB= -40V; IE= 0;TJ= 150℃ VCB= -50V; IE= 0;TJ= 150℃ -2.0 mA -0.4 -5 1000 mA mA isc Website：www.iscsemi.cn 2