BDV65B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV64/64A/64B/64C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER BDV65 BDV65A VCBO Collector-base voltage BDV65B BDV65C BDV65 BDV65A VCEO Collector-emitter voltage BDV65B BDV65C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ Collector power dissipation Ta=25℃ Junction temperature Storage temperature 3.5 150 -65~150 ℃ ℃ Open collector Open base 100 120 5 12 15 0.5 125 W V A A A Open emitter 100 120 60 80 V CONDITIONS VALUE 60 80 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDV65 BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C IEBO hFE VEC Emitter cut-off current DC current gain Diode forward voltage IC=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150℃ VCB=80V, IE=0 VCB=40V, IE=0;TC=150℃ VCB=100V, IE=0 VCB=50V, IE=0;TC=150℃ VCB=120V, IE=0 VCB=60V, IE=0;TC=150℃ VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS BDV65/65A/65B/65C MIN 60 80 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 120 2.0 2.5 0.4 2.0 0.4 2.0 0.4 2.0 0.4 2.0 V V ICBO Collector cut-off current mA ICEO Collector cut-off current 2 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=10A 1000 3.5 5 mA mA V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV65/65A/65B/65C Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3