BDV66C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDV66 Collector-Base Voltage BDV66A BDV66B BDV66C BDV66 Collector-Emitter Voltage BDV66A BDV66B BDV66C VEBO IC ICM IB B BDV66/A/B/C VALUE -80 -100 UNIT VCBO V -120 -140 -60 -80 V -100 -120 -5 -16 -20 -0.5 175 150 -65~150 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.625 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDV66 BDV66A IC= -100mA ;IB=0 BDV66B BDV66C VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDV66 BDV66A ICBO Collector Cutoff Current BDV66B BDV66C ICBO IEBO hFE COB Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance VCB= -60V;IE= 0;TJ= 150℃ VCB= -70V;IE= 0;TJ= 150℃ VCB= VCBOmax;IE= 0 VEB= -5V; IC= 0 IC= -10A ; VCE= -3V IE= 0 ; VCB= -10V; ftest= 1MHz IC= -10A; IB= -40mA IC= -10A ; VCE= -3V VCE= 1/2VCEOmax; IB= 0 VCB= -40V;IE= 0;TJ= 150℃ VCB= -50V;IE= 0;TJ= 150℃ CONDITIONS BDV66/A/B/C MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -2 -2.5 -1 V V mA -5 mA -1 -5 1000 300 mA mA pF Switching times ton toff Turn-on Time Turn-off Time 1 3.5 μs μs IC= -10A; IB1= -IB2= -40mA; VCC= 12V isc Website：www.iscsemi.cn 2