BDV96

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDV92 VCER Collector-Emitter Voltage BDV94 BDV96 BDV92 VCEO Collector-Emitter Voltage BDV94 BDV96 VEBO IC ICM IB B BDV92/94/96 VALUE -60 -80 -100 -60 -80 -100 -7 -10 -20 -7 -14 100 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Emitter Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A A W ℃ ℃ IE PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDV92 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV94 BDV96 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -4A; IB= -0.4A B BDV91/93/95 CONDITIONS MIN -60 TYP. MAX UNIT IC= -100mA ;IB=0 -80 -100 -1.0 -3.0 -1.6 -1.6 -0.2 -0.1 -1.0 -0.1 20 5 4 V V V V V mA mA mA IC= -10A; IB= -3.3A IC= -4A; IB= -0.4A B IC= -4A ; VCE= -4V VCE= VCEOmax;IB= 0 VCB= VCBOmax;IE= 0 1 VCB= /2VCBOmax;IE= 0; TJ= 150℃ VEB= -7V; IC=0 IC= -4A ; VCE= -4V IC= -10A ; VCE= -4V IC= -0.5A ;VCE= -10V MHz Switching times ton toff tf Turn-on Time Turn-off Time Fall Time IC= -4A; IB1= -IB2= -0.4A; VCC= -30V 0.3 0.7 0.3 μs μs μs isc Website：www.iscsemi.cn 2