BDW24B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW24/A/B/C DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW24 BDW24A BDW24B BDW24C BDW24 BDW24A BDW24B BDW24C VEBO IC ICM IB B VALUE -45 -60 UNIT VCER Collector-Emitter Voltage V -80 -100 -45 -60 V -80 -100 -5 -6 -8 -0.2 50 150 -65~150 V A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW24 BDW24A IC= -100mA ;IB=0 BDW24B BDW24C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on)-1 VBE(on)-2 VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW24 BDW24A BDW24B BDW24C BDW24 BDW24A BDW24B BDW24C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= -2A; IB= -8mA B BDW24/A/B/C CONDITIONS MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -80 -100 -2 -3 -2.5 -2.5 -3 -1.8 V V V V V V IC= -6A; IB= -60mA B IC= -2A; IB= -8mA B IC= -1A ; VCE= -3V IC= -6A ; VCE= -3V IF= -2A VCE= -22V; IB= 0 B ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.5 VCE= -40V; IB= 0 B mA VCE= -50V; IB= 0 B VCB= -45V;IE= 0 VCB= -60V;IE= 0 -0.2 VCB= -80V;IE= 0 VCB= -100V;IE= 0 VEB= -5V; IC=0 IC= -1A ; VCE= -3V IC= -2A ; VCE= -3V IC= -6A ; VCE= -3V 1000 750 100 20000 -2 mA mA ICBO Collector Cutoff Current isc Website：www.iscsemi.cn 2