BDW42

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW42 DESCRIPTION ・With TO-220C package ・Complement to type BDW47 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For general purpose and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 15 0.5 85 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.47 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=30mA, IB=0 IC=5A ,IB=10mA IC=10A ,IB=50mA IC=10A ; VCE=4V VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=3A ; VCE=3V;f=1MHz IE=0 ; VCB=10V;f=0.1MHz 1000 250 4.0 MIN 100 TYP. BDW42 MAX UNIT V 2.0 3.0 3.0 1.0 2.0 2.0 V V V mA mA mA MHz 200 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDW42 Fig.2 Outline dimensions 3