BDW45

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW45 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW40 APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -60 -60 -5 -15 -0.5 85 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.47 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BDW45 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -60 V VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA B -2.0 V Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA -3.0 V Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -1.0 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 fT DC Current Gain IC= -10A ; VCE= -4V 250 Current-Gain—Bandwidth Product IC= -3A; VCE= -3V; ftest= 1MHz IE= 0; VCB= -10V; ftest= 0.1MHz 4 MHz COB Output Capacitance 300 pF isc Website：www.iscsemi.cn 2