BDW51B

厂商：
ISC(固电半导体)
封装：
描述：
BDW51B - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

数据手册：

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数据手册
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BDW51B 数据手册

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C ·Complement to Type BDW52/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW51 Collector-Base Voltage BDW51A BDW51B BDW51C BDW51 Collector-Emitter Voltage BDW51A BDW51B BDW51C VEBO IC ICM IB B VALUE 45 60 UNIT VCBO V 80 100 45 60 V 80 100 5 15 20 7 125 200 -65~200 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW51 BDW51A IC= 100mA; IB= 0 BDW51B BDW51C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDW51 BDW51A BDW51B BDW51C BDW51 BDW51A BDW51B BDW51C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product IC= 5A; IB= 0.5A B BDW51/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 1.0 3.0 2.5 1.5 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V V IC= 10A; IB= 2.5A IC= 10A; IB= 2.5A IC= 5A; VCE= 4V VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ VCE= 22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 1.0 VCE= 40V; IB= 0 B mA VCE= 50V; IB= 0 B VEB= 5V; IC=0 IC= 5A; VCE= 4V IC= 10A; VCE= 4V IC= 0.5A; VCE= 4V 20 5 3 2.0 150 mA MHz isc Website：www.iscsemi.cn 2

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BDW51B

### 物料型号 - BDW51/A/B/C

### 器件简介 - 该器件为NPN型功率晶体管，适用于功率线性和开关应用。

### 引脚分配 - PIN 1: BASE（基极） - PIN 2: EMITTER（发射极） - PIN 3: COLLECTOR（集电极）

### 参数特性 - Collector Current (Ic): 连续集电极电流为15A。 - Collector-Emitter Sustaining Voltage (VCEO(SUS)): BDW51为45V，BDW51A为60V，BDW51B为80V，BDW51C为100V。 - Collector-Base Voltage (VCBO): BDW51为45V，BDW51A为60V，BDW51B为80V，BDW51C为100V。 - Collector-Emitter Voltage (VCEO): BDW51为45V，BDW51A为60V，BDW51B为80V，BDW51C为100V。 - Emitter-Base Voltage (VEBO): 5V。 - Base Current (IB): 7A。

### 功能详解 - 设计用于功率线性和开关应用。

### 应用信息 - 适用于功率线性和开关应用。

### 封装信息 - TO-3封装。 - 封装尺寸参数如下： - A: 39.00mm - B: 25.30mm至26.67mm - C: 7.80mm至8.30mm - D: 0.90mm至1.10mm - E: 1.40mm至1.60mm - G: 10.92mm - H: 5.46mm - K: 11.40mm至13.50mm - L: 16.75mm至17.05mm - N: 19.40mm至19.62mm - O: 4.00mm至4.20mm - U: 30.00mm至30.20mm - V: 4.30mm至4.50mm

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