BDW51B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C ·Complement to Type BDW52/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW51 Collector-Base Voltage BDW51A BDW51B BDW51C BDW51 Collector-Emitter Voltage BDW51A BDW51B BDW51C VEBO IC ICM IB B VALUE 45 60 UNIT VCBO V 80 100 45 60 V 80 100 5 15 20 7 125 200 -65~200 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW51 BDW51A IC= 100mA; IB= 0 BDW51B BDW51C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDW51 BDW51A BDW51B BDW51C BDW51 BDW51A BDW51B BDW51C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product IC= 5A; IB= 0.5A B BDW51/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 1.0 3.0 2.5 1.5 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V V IC= 10A; IB= 2.5A IC= 10A; IB= 2.5A IC= 5A; VCE= 4V VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ VCE= 22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 1.0 VCE= 40V; IB= 0 B mA VCE= 50V; IB= 0 B VEB= 5V; IC=0 IC= 5A; VCE= 4V IC= 10A; VCE= 4V IC= 0.5A; VCE= 4V 20 5 3 2.0 150 mA MHz isc Website：www.iscsemi.cn 2