BDW51C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW51C DESCRIPTION ・With TO-3 package ・Complement to type BDW52C ・Excellent safe operating area APPLICATIONS ・For use in power linear and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 15 20 7 125 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.5A IC=10A; IB=2.5A IC=10A; IB=2.5A IC=5A ; VCE=4V VCE=50V; IB=0 VCB=100V; IE=0 TC=150℃ VEB=5V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=0.5A ; VCE=4V 20 5 3 MIN 100 TYP. BDW51C MAX UNIT V 1.0 3.0 2.5 1.5 1.0 0.5 5.0 2.0 150 V V V V mA mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDW51C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3