BDW52A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C ·Complement to Type BDW51/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW52 Collector-Base Voltage BDW52A BDW52B BDW52C BDW52 Collector-Emitter Voltage BDW52A BDW52B BDW52C VEBO IC ICM IB B VALUE -45 -60 UNIT VCBO V -80 -100 -45 -60 V -80 -100 -5 -15 -20 -7 125 200 -65~200 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW52 BDW52A IC= -100mA; IB= 0 BDW52B BDW52C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDW52 BDW52A BDW52B BDW52C BDW52 BDW52A BDW52B BDW52C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product IC= -5A; IB= -0.5A B BDW52/A/B/C CONDITIONS MIN -45 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 -1.0 -3.0 -2.5 -1.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V V IC= -10A; IB= -2.5A IC= -10A; IB=- 2.5A IC= -5A; VCE= -4V VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃ VCE= -22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -1.0 VCE= -40V; IB= 0 B mA VCE= -50V; IB= 0 B VEB= -5V; IC=0 IC= -5A; VCE= -4V IC= -10A; VCE= -4V IC= -0.5A; VCE= -4V 20 5 3 -2.0 150 mA MHz isc Website：www.iscsemi.cn 2