BDW52C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW52C DESCRIPTION ・With TO-3 package ・Complement to type BDW51C ・Excellent safe operating area APPLICATIONS ・For use in power linear and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -15 -20 -7 125 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-5A; IB=-0.5A IC=-10A; IB=-2.5A IC=-10A; IB=-2.5A IC=-5A ; VCE=-4V VCE=-50V; IB=0 VCB=-100V; IE=0 TC=150℃ VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-4V 20 5 3 MIN -100 BDW52C TYP. MAX UNIT V -1.0 -3.0 -2.5 -1.5 -1.0 -0.5 -5.0 -2.0 150 V V V V mA mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDW52C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3