INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER BDW56 VCBO Collector-Base Voltage BDW58 BDW60 BDW56 VCER Collector-Emitter Voltage RBE= 1kΩ BDW58 BDW60 BDW56 VCEO Collector-Emitter Voltage BDW58 BDW60 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 8 175 -65~175 V A A W ℃ ℃ V V V UNIT
BDW56/58/60
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 10 100 UNIT ℃/W ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW56 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW58 BDW60 VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDW56 ICBO Collector Cutoff Current BDW58 BDW60 IEBO hFE-1 hFE-2 hFE-3 fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -0.5A; IB= -50mA
B
BDW56/58/60
CONDITIONS
MIN -45
TYP.
MAX
UNIT
IC= -10mA ;IB=0
B
-60 -80 -0.5 -1.0 -0.1 -10 -10 -10 -10 25 40 25 75 250
V
V V μA
IC= -0.5A ; VCE= -2V VCB= VCBOmax;IE= 0 VCB= -30V; IE=0;TJ= 150℃ VCB= -45V; IE=0;TJ= 150℃ VCB= -70V; IE=0;TJ= 150℃ VEB= -5V; IC=0 IC= -5mA ; VCE= -2V IC= -150mA ; VCE= -2V IC= -500mA ; VCE= -2V IC= -50mA;VCE= -5V;ftest= 35MHz
μA
μA
MHz
Switching times td tr tstg tf Delay Time Rise Time Storage Time Fall Time 30 40 500 80 ns ns ns ns
IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V
isc Website:www.iscsemi.cn
2
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