BDW59

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 ·Complement to Type BDW56/58/60 APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW55 VCBO Collector-Base Voltage BDW57 BDW59 BDW55 VCER Collector-Emitter Voltage RBE= 1kΩ BDW57 BDW59 BDW55 VCEO Collector-Emitter Voltage BDW57 BDW59 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 45 60 100 45 60 100 45 60 80 5 1 1.5 8 175 -65~175 V A A W ℃ ℃ V V V UNIT BDW55/57/59 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 10 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW55 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW57 BDW59 VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDW55 ICBO Collector Cutoff Current BDW57 BDW59 IEBO hFE-1 hFE-2 hFE-3 fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= 0.5A; IB= 50mA IC= 0.5A ; VCE= 2V VCB= VCBOmax;IE= 0 VCB= 30V; IE=0;TJ= 150℃ VCB= 45V; IE=0;TJ= 150℃ VCB= 70V; IE=0;TJ= 150℃ VEB= 5V; IC=0 IC= 5mA ; VCE= 2V IC= 150mA ; VCE= 2V IC= 500mA ; VCE= 2V IC= 50mA ; VCE= 5V;ftest= 35MHz IC= 10mA ;IB=0 B BDW55/57/59 CONDITIONS MIN 45 60 80 TYP. MAX UNIT V 0.5 1.0 0.1 10 10 10 10 25 40 25 250 250 V V μA μA μA MHz Switching times td tr tstg tf Delay Time Rise Time Storage Time Fall Time 30 30 500 80 ns ns ns ns IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V isc Website：www.iscsemi.cn 2