BDW63A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW63 BDW63A VCBO Collector-Base Voltage BDW63B BDW63C BDW63D BDW63 BDW63A VCEO Collector-Emitter Voltage BDW63B BDW63C BDW63D VEBO IC IB B BDW63/A/B/C/D VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 2 UNIT V V Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A PC W 60 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW63 BDW63A V(BR)CEO Collector-Emitter Breakdown Voltage BDW63B BDW63C BDW63D VCE(sat)-1 VCE(sat)-2 VBE(on) VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW63 BDW63A ICEO Collector Cutoff Current BDW63B BDW63C BDW63D BDW63 BDW63A ICBO Collector Cutoff Current BDW63B BDW63C BDW63D IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= 2A; IB= 12mA B BDW63/A/B/C/D CONDITIONS MIN 45 60 TYP. MAX UNIT IC= 30mA; IB=0 80 100 120 2.5 4.0 2.5 3.5 V V V V V IC= 6A; IB= 60mA B IC= 2A; VCE= 3V IF= 6A VCE= 30V; IB= 0 B VCE= 30V; IB= 0 B VCE= 40V; IB= 0 B 0.5 mA VCE= 50V; IB= 0 B VCE= 60V; IB= 0 B VCB= 45V; IE= 0 VCB= 45V; IE= 0; TJ= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TJ= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TJ= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TJ= 150℃ VCB= 120V; IE= 0 VCB= 120V; IE= 0; TJ= 150℃ VEB= 5V; IC=0 IC= 2A; VCE= 3V IC= 6A; VCE= 3V 750 100 0.2 5.0 0.2 5.0 0.2 5.0 0.2 5.0 0.2 5.0 2.0 20000 mA mA Switching times ton toff Turn-on Time Turn-off Time IC= 3A; IB1= -IB2= 12mA; VBE(off)= -4.5V, RL=10Ω 1.0 5.0 μs μs isc Website：www.iscsemi.cn 2