BDW64

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW64 BDW64A VCBO Collector-Base Voltage BDW64B BDW64C BDW64D BDW64 BDW64A VCEO Collector-Emitter Voltage BDW64B BDW64C BDW64D VEBO IC IB B BDW64/A/B/C/D VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 2 UNIT V V Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A PC W 60 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW64 BDW64A V(BR)CEO Collector-Emitter Breakdown Voltage BDW64B BDW64C BDW64D VCE(sat)-1 VCE(sat)-2 VBE(on) VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW64 BDW64A ICEO Collector Cutoff Current BDW64B BDW64C BDW64D BDW64 BDW64A ICBO Collector Cutoff Current BDW64B BDW64C BDW64D IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= -2A; IB= -12mA B BDW64/A/B/C/D CONDITIONS MIN -45 -60 TYP. MAX UNIT IC= -30mA; IB= 0 -80 -100 -120 -2.5 -4.0 -2.5 -3.5 V V V V V IC= -6A; IB= -60mA B IC= -2A; VCE= -3V IF= -6A VCE= -30V; IB= 0 B VCE= -30V; IB= 0 B VCE= -40V; IB= 0 B -0.5 mA VCE= -50V; IB= 0 B VCE= -60V; IB= 0 B VCB= -45V; IE= 0 VCB= -45V; IE= 0; TJ= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TJ= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TJ= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TJ= 150℃ VCB= -120V; IE= 0 VCB= -120V; IE= 0; TJ= 150℃ VEB= -5V; IC= 0 IC= -2A; VCE= -3V IC= -6A; VCE= -3V 750 100 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -2.0 20000 mA mA Switching times ton toff Turn-on Time Turn-off Time IC= -3A; IB1= -IB2= -12mA; VBE(off)= -4.5V, RL=10Ω 1.0 5.0 μs μs isc Website：www.iscsemi.cn 2