BDW74D

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 750(Min.)@ IC= -3A ·Complement to Type BDW73/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW74 BDW74A VCBO Collector-Base Voltage BDW74B BDW74C BDW74D BDW74 BDW74A VCEO Collector-Emitter Voltage BDW74B BDW74C BDW74D VEBO IC IB B BDW74/A/B/C/D VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -8 -0.3 2 UNIT V V Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A PC W 80 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MAX 1.56 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW74 BDW74A V(BR)CEO Collector-Emitter Breakdown Voltage BDW74B BDW74C BDW74D VCE(sat)-1 VCE(sat)-2 VBE(on) VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW74 BDW74A ICEO Collector Cutoff Current BDW74B BDW74C BDW74D BDW74 BDW74A ICBO Collector Cutoff Current BDW74B BDW74C BDW74D IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= -3A; IB= -12mA B BDW74/A/B/C/D CONDITIONS MIN -45 -60 TYP. MAX UNIT IC= -30mA; IB= 0 -80 -100 -120 -2.5 -4.0 -2.5 -3.5 V V V V V IC= -8A; IB= -80mA B IC= -3A; VCE= -3V IF= -8A VCE= -30V; IB= 0 B VCE= -30V; IB= 0 B VCE= -40V; IB= 0 B -0.5 mA VCE= -50V; IB= 0 B VCE= -60V; IB= 0 B VCB= -45V; IE= 0 VCB= -45V; IE= 0; TJ= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TJ= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TJ= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TJ= 150℃ VCB= -120V; IE= 0 VCB= -120V; IE= 0; TJ= 150℃ VEB= -5V; IC= 0 IC= -3A; VCE= -3V IC= -8A; VCE= -3V 750 100 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -2.0 20000 mA mA Switching times ton toff Turn-on Time Turn-off Time IC= -3A; IB1= -IB2= -12mA; VBE(off)= 3.5V, RL=10Ω 1.0 5.0 μs μs isc Website：www.iscsemi.cn 2