BDW83B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current TC=25℃ Collector power dissipation Junction temperature Storage temperature Ta=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 W 3.5 150 -65~150 ℃ ℃ V A A V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=6A ,IB=12mA IC=15A ,IB=150mA IC=6A ; VCE=3V VCB=45V, IE=0 TC=150℃ VCB=60V, IE=0 TC=150℃ VCB=80V, IE=0 TC=150℃ VCB=100V, IE=0 TC=150℃ VCB=120V, IE=0 TC=150℃ VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=6A ; VCE=3V IC=15A ; VCE=3V IE=15A IC=30mA, IB=0 BDW83/83A/83B/83C/83D CONDITIONS MIN 45 60 80 100 120 TYP. MAX UNIT V 2.5 4.0 2.5 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V mA 1 mA 2 750 100 3.5 0.9 7.0 20000 mA V μs μs IC = 10 A, IB1 =-IB2=40 mA RL=3Ω; VBE(off) = -4.2V Duty Cycle≤2% THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.83 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDW83/83A/83B/83C/83D Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3