BDW84D

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW84/84A/84B/84C/84D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER BDW84 BDW84A VCBO Collector-base voltage BDW84B BDW84C BDW84D BDW84 BDW84A VCEO Collector-emitter voltage BDW84B BDW84C BDW84D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current TC=25℃ Collector power dissipation Junction temperature Storage temperature Ta=25℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 W 3.5 150 -65~150 ℃ ℃ V A A V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 BDW84A ICBO Collector cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A ICEO Collector cut-off current BDW84B BDW84C BDW84D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=-6A ,IB=-12mA IC=-30mA, IB=0 BDW84/84A/84B/84C/84D CONDITIONS MIN -45 -60 -80 -100 -120 TYP. MAX UNIT V -2.5 -4.0 -2.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V IC=-15A ,IB=-150mA IC=-6A ; VCE=-3V VCB=-45V, IE=0 TC=150℃ VCB=-60V, IE=0 TC=150℃ VCB=-80V, IE=0 TC=150℃ VCB=-100V, IE=0 TC=150℃ VCB=-120V, IE=0 TC=150℃ VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-6A ; VCE=-3V IC=-15A ; VCE=-3V IE=-15A IC =-10 A, IB1 =-IB2=-40 mA RL=3Ω; VBE(off) =4.2V Duty Cycle≤2% 0.9 7.0 750 100 mA -1 mA -2 20000 mA -3.5 V μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.83 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDW84/84A/84B/84C/84D Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3