BDW94C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON ・Complement to type BDW93/A/B/C APPLICATIONS ・Hammer drivers, ・Audio amplifiers applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW94/A/B/C Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDW94 BDW94A VCBO Collector-base voltage BDW94B BDW94C BDW94 BDW94A VCEO Collector-emitter voltage BDW94B BDW94C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -100 -5 -12 -15 -0.2 80 150 -65~150 V A A A W ℃ ℃ Open emitter -80 -100 -45 -60 V CONDITIONS VALUE -45 -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 Collector-emitter sustaining voltage BDW94A IC=-0.1A, IB=0 BDW94B BDW94C VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage BDW94 Collector cut-off current BDW94A BDW94B BDW94C BDW94 Collector cut-off current BDW94A BDW94B BDW94C IEBO hFE-1 hFE-2 hFE-3 VF-1 VF-2 Emitter cut-off current DC current gain DC current gain DC current gain Forward diode voltage Forward diode voltage IC=-5A ,IB=-20mA IC=-10A ,IB=-0.1A IC=-5A ,IB=-20mA IC=-10A ,IB=-0.1A VCB=-45V, IE=0 VCB=-60V, IE=0 CONDITIONS BDW94/A/B/C MIN -45 -60 TYP. MAX UNIT VCEO(SUS) V -80 -100 -2.0 -3.0 -2.5 -4.0 V V V V ICBO -0.1 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-45V, IB=0 VCE=-60V, IB=0 -1.0 VCE=-80V, IB=0 VCE=-100V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-5A ; VCE=-3V IC=-10A ; VCE=-3V IF=-5A IF=-10A 1000 750 100 -2.0 -4.0 20000 -2.0 mA ICEO mA mA V V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDW94/A/B/C Fig.2 Outline dimensions 3