BDX14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX14 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -55V(Min.) APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -90 -60 -55 -7 -4 -2 29 200 -65~200 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDX14 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 IC= -100mA; RBE= 100Ω -55 V VCER(SUS) Collector-Emitter Sustaining Voltage -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.0 V VBE(on) ICEX Base-Emitter On Voltage IC= -0.5A; VCE= -4V VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ IC= -0.5A; VCE= -4V 25 -1.7 -1.0 -5.0 100 V Collector Cutoff Current mA hFE DC Current Gain fT Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V 4 MHz isc Website：www.iscsemi.cn 2