BDX20

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX20 DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) ·High Switching Speed APPLICATIONS ·Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage- VBE= 1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE -160 -160 -140 -7 -10 -7 117 200 -65~200 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BDX20 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -140 V VCEX Collector-Emitter Breakdown Voltage IC= -100mA ; VBE= 1.5V -160 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A -5.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.7 V VBE(on)-2 Base-Emitter On Voltage IC= -10A ; VCE= -4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE=1.5V,TC= 150℃ VCB= -140V; IE= 0 -5.7 -1.0 -10 -1.0 V ICEX Collector Cutoff Current mA ICBO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= -7.0V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -3A ; VCE= -4V 20 70 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 10 fT Current Gain-Bandwidth Product IC= -1A;VCE=-10V;ftest= 1.0MHz 4 MHz isc Website：www.iscsemi.cn 2