BDX33B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX34/A/B/C APPLICATIONS ・For power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX33/A/B/C Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDX33 VCBO Collector-base voltage BDX33A BDX33B BDX33C BDX33 VCEO Collector-emitter voltage BDX33A BDX33B BDX33C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 45 60 80 100 5 10 15 0.25 70 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.78 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDX33 BDX33A IC=0.1A, IB=0 BDX33B BDX33C BDX33/33A BDX33B/33C BDX33/33A BDX33B/33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C IEBO Emitter cut-off current BDX33/33A DC current gain BDX33B/33C VF Forward diode voltage IC=3A ; VCE=3V IF=8A IC=4A ,IB=8mA 80 100 CONDITIONS MIN 45 60 BDX33/A/B/C TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V VCEsat Collector-emitter saturation voltage 2.5 IC=3A ,IB=6mA IC=4A ; VCE=3V 2.5 IC=3A ; VCE=3V VCB=45V, IE=0 VCB=60V, IE=0 0.2 VCB=80V, IE=0 VCB=100V, IE=0 VCE=22V, IB=0 VCE=30V, IB=0 0.5 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=4A ; VCE=3V 750 5 V VBE Base-emitter on voltage V ICBO Collector cut-off current mA ICEO Collector cut-off current mA mA hFE 4.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX33/A/B/C Fig.2 Outline dimensions 3