BDX34C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX33/A/B/C APPLICATIONS ・For power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX34/A/B/C Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDX34 VCBO Collector-base voltage BDX34A BDX34B BDX34C BDX34 VCEO Collector-emitter voltage BDX34A BDX34B BDX34C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -10 -15 -0.25 70 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.78 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDX34 Collector-emitter sustaining voltage BDX34A IC=-0.1A, IB=0 BDX34B BDX34C Collector-emitter saturation voltage BDX34/34A BDX34B/34C BDX34/34A VBE Base-emitter on voltage BDX34B/34C BDX34 BDX34A ICBO Collector cut-off current BDX34B BDX34C BDX34 BDX34A ICEO Collector cut-off current BDX34B BDX34C IEBO hFE Emitter cut-off current BDX34/34A DC current gain BDX34B/34C VF Forward diode voltage IC=-3A ; VCE=-3V IF=-8A VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V 750 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-22V, IB=0 VCE=-30V, IB=0 IC=-3A ; VCE=-3V VCB=-45V, IE=0 VCB=-60V, IE=0 IC=-4A ,IB=-8mA -80 -100 CONDITIONS MIN -45 -60 BDX34/A/B/C TYP. MAX UNIT VCEO(SUS) V VCEsat -2.5 IC=-3A ,IB=-6mA IC=-4A ; VCE=-3V -2.5 V V -0.2 mA -0.5 mA -5.0 mA -4.0 V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX34/A/B/C Fig.2 Outline dimensions 3